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indium phosphide
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Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.
==Manufacturing==
Indium phosphide is prepared from the reaction of white phosphorus and indium iodide at 400 °C. 〔(Indium Phosphide at HSDB )〕
==Uses==
InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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